| Sputtering is the term to describe the mechanism in which atoms are dislodged from the surface of a material by collision with high energy particles. It has become the most widely utilized deposition technique for a variety of metallic / insulating films. In clean room WAG we have a total of 12 systems available each with specific features / options.
Options in generalDc Magnetron sputtering Used to deposit with a high deposition rate like Al and Al Alloy's, normally with Ar. High rates (20-25nm/s) are possible. Magnetron sputtered films have high purity. Pulsed Dc sputtering his technique uses uni-polar or bipolar square wave form operating at 50 - 250 kHz. This technique helps to eliminate the " disappearing anode" effect found when depositing electrically insulating films with continious Dc power. Example is Al203 deposition. Rf Sputtering Used to deposit with low deposition rate. Suitable for materials which require thin layers and is also used to do depositions from insulators. Bias sputtering This technique has been utilized to increase step coverage of deposited films, that is an RF Bias is supplied to the substrates causing them to be bombarded by energetic sputter gas ions ( eg Ar+), as the film is being deposited. The applied rf causes the substrate to acquire a negative self bias, and thereby accelerates ions from the discharge to their surfaces.With this technique it is possible to reduce tensile stress processes to compressive stress. Reactive sputtering The introduction of reactive gasses into the sputtering chamber during the deposition process allows material sputtered from the target to combine with such gasses to obtain chemical compound films. Examples are Ti/W depositions and the deposition of TiN from an Ti Target with a Ar with N2 mixture. Both Rf And Dc Magnetron are possible.
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